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| Data Sheet No. PD60235 IPS1011(S)(R) INTELLIGENT POWER LOW SIDE SWITCH Features * * * * * * * Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current Product Summary Rds(on) 13m (max.) Vclamp 36V Ishutdown 85A (typ.) Packages Description The IPS1011(S)(R) is a three terminal Intelligent Power Switch (IPS) that features a low side MOSFET with overcurrent, over-temperature, ESD protection and drain to source active clamp. This device offers protections and the high reliability required in harsh environments. The switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165C or when the drain current reaches 85A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. TO-220 IPS1011 DPak IPS1011S D-Pak IPS1011R Typical Connection +Bat Load D 1 Input R Input Signal V Diag IN S 3 2 Control www.irf.com 1 IPS1011(S)(R) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25C unless otherwise specified). Symbol Vds Vds cont. Vin Isd cont. Pd Parameter Maximum drain to source voltage Maximum continuous drain to source voltage Maximum input voltage Max diode continuous current (limited by thermal dissipation) Maximum power dissipation (internally limited by thermal protection) Rth=5C/W IPS1011 Rth=40C/W IPS1011S 1" sqr. footprint Rth=50C/W IPS1011R 1" sqr. footprint Electrostatic discharge voltage (Human body) C=100pF, R=1500 Between drain and source Other combinations Electrostatic discharge voltage (Machine Model) C=200pF,R=0 Between drain and source Other combinations Max. storage & operating temperature junction temperature Lead soldering temperature (10 seconds) Min. -0.3 -0.3 Max. 36 28 6 5 25 3.1 2.5 4 3 0.5 0.3 150 300 Units V V V A W ESD kV Tj max. Tsoldering -40 C C Thermal Characteristics Symbol Rth1 Rth2 Rth1 Rth2 Rth3 Rth1 Rth2 Rth3 Parameter Thermal resistance junction to ambient IPS1011 TO-220 free air Thermal resistance junction to case IPS1011 TO-220 Thermal resistance junction to ambient IPS1011S DPak std. footprint Thermal resistance junction to ambient IPS1011S DPak 1" sqr. footprint Thermal resistance junction to case IPS1011S DPak Thermal resistance junction to ambient IPS1011R D-Pak std. footprint Thermal resistance junction to ambient IPS1011R D-Pak 1" sqr. footprint Thermal resistance junction to case IPS1011R D-Pak Typ. 50 1.2 60 40 1.2 70 50 1.2 Max. Units C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol VIH VIL Ids Parameter High level input voltage Low level input voltage Continuous drain current, Tambient=85C, Tj=125C, Vin=5V Rth=5C/W IPS1011 Rth=40C/W IPS1011S 1" sqr. Footprint Rth=50C/W IPS1011R 1" sqr. Footprint Recommended resistor in series with IN pin to generate a diagnostic Max recommended load inductance (including line inductance) (1) Max frequency (switching losses = conduction losses) Max Input rising time Min. 4.5 0 Max. 5.5 0.5 18 6.5 6 10 5 200 1 Units A Rin Max L Max F Max t rise 0.5 k H Hz s (1) Higher inductance is possible if maximum load current is limited - see figure 11 www.irf.com 2 IPS1011(S)(R) Static Electrical Characteristics Tj=25C, Vcc=14V (unless otherwise specified) Symbol Rds(on) Idss1 Idss2 V clamp1 V clamp2 Vin clamp Vth Parameter ON state resistance Tj=25C ON state resistance Tj=150C (2) Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source pin clamp voltage Input threshold voltage Min. Typ. 10 19 0.1 0.2 39 40 6.5 1.7 Max. 13 25 10 20 Units m A Test Conditions Vin=5V, Ids=30A Vcc=14V, Tj=25C Vcc=28V, Tj=25C Id=20mA Id=5A Iin=1mA Id=10mA 36 5.5 42 7.5 V Switching Electrical Characteristics Vcc=14V, Resistive load=0.5, Rinput=50, Vin=5V, Tj=25C Symbol Tdon Tr Tdoff Tf Eon + Eoff Parameter Turn-on delay time to 20% Rise time 20% to 80% Turn-off delay time to 80% Fall time 80% to 20% Turn on and off energy Min. 15 20 100 30 Typ. 50 50 330 70 5 Max. 150 100 1000 150 Units s mJ Test Conditions See figure 2 Protection Characteristics Symbol Tsd Isd OV Vreset Treset Parameter Over temperature threshold Over current threshold Over voltage protection (not active when the device is ON ) IN protection reset threshold Time to reset protection Min. 150(2) 60 34 Typ. 165 85 37 1.7 50 Max. Units C A V V s Test Conditions See figure 1 See figure 1 110 15(2) 200 Vin=0V Diagnostic Symbol Iin, on Iin, off Parameter ON state IN positive current OFF state IN positive current (after protection latched ) Min. 15 150 Typ. 32 230 Max. 70 350 Units A Test Conditions Vin=5V Vin=5V (2) Guaranteed by design www.irf.com 3 IPS1011(S)(R) Lead Assignments 2 - Drain 2 - Drain 1- In 2- D 3- S 123 DPak - D Pak 1 2 3 TO220 Functional Block Diagram All values are typical DRAIN 37V IN 75 15k Vds > O.V. 43V 150k S R Q 6.5V Tj > 165C I > Isd 2k SOURCE www.irf.com 4 IPS1011(S)(R) All curves are typical values. Operating in the shaded area is not recommended. Vin Ids Ishutdown Isd t 80% Vin 20% Tr-in 80% Tj Tsd 165C Tshutdown Ids 20% Td on Tr Td off Tf Vdiag normal fault Vds Figure 1 - Timing diagram Figure 2 - IN rise time & switching definitions T clamp Vin L Rem : During active clamp, Vload is negative V load R + 14V Vds S Ids Ids Vds clamp D IN 5V Vds Vin Vcc 0V See Application Notes to evaluate power dissipation Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit www.irf.com 5 IPS1011(S)(R) 200% 200% Rds(on), Drain-to-Source On Resistance (normalized) 150% Rds(on), Drain-to-Source On Resistance (Normalized) 150% 100% 50% 100% 0% 0 1 2 3 4 5 6 50% -50 0 50 100 150 Vin, input voltage (V) Figure 5 - Normalized Rds(on) (%) Vs Input voltage (V) Tj, junction temperature (C) Figure 6 - Normalized Rds(on) (%) Vs Tj (C) 90 80 70 140% 120% Isd, normalized I shutdown (%) 100% 80% 60% 40% 20% 0% -50 0 50 100 150 Ids, output current 60 50 40 30 20 10 0 0 1 2 3 4 5 6 I limit I shutdown Vin, input voltage (V) Figure 7 - Current limitation and current shutdown Vs Input voltage (V) Tj, junction temperature (C) Figure 8 - Normalized I shutdown (%) Vs junction temperature (C) www.irf.com 6 IPS1011(S)(R) 30 25 20 15 10 5 0 -50 5C/W 10C/W 1" sq footprint std footprint 100 90 80 50C/W 25C ambient 50C/W 85C ambient 50C/W -40C ambient Ids, cont. Output current (A) Ids, output current (A) 70 60 50 40 30 20 10 0 Tamb, Ambient temperature (C) 0 50 100 150 0.1 1 10 100 Protection response time (s) Figure 10 - Ids (A) Vs over temperature protection response time (s) Figure 9 - Max. continuous output current (A) Vs Ambient temperature (C) 100 Zth, transient thermal impedance (C/W) 0.01 0.1 1 100 Ids, output current (A) 10 10 1 0.1 1 0.001 0.01 1E-05 1E-04 0.001 0.01 0.1 1 10 100 Inductive load (mH) Figure 11 - Max. ouput current (A) Vs Inductive load (mH) Time (s) Figure 12 - Transient thermal impedance (C/W) Vs time (s) www.irf.com 7 IPS1011(S)(R) 250 200 Tsd, over temperature shutdown (C) 180 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Ion, Ioff, input durrent (A) 200 150 I on I latch 100 50 0 -50 0 50 100 150 Tj, junction temperature (C) Figure 13 - Input current (A) On and Off Vs junction temperature (C) Vin, input voltage (V) Figure 14 - Over temperature shutdown (C) Vs input voltage (V) www.irf.com 8 IPS1011(S)(R) Case Outline - TO-220 AB www.irf.com 9 IPS1011(S)(R) Case Outline - DPak (SMD-220) www.irf.com 10 IPS1011(S)(R) Case Outline - D-Pak www.irf.com 11 IPS1011(S)(R) Tape & Reel - DPak (SMD220) www.irf.com 12 IPS1011(S)(R) Tape & Reel - D-Pak IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. This product is designed and qualified for the Automotive [Q100] market. 9/22/2005 www.irf.com 13 |
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